Transport measurements through stacked InAs self-assembled quantum dots in time domain

M. S. Jun, D. Y. Jeong, J. E. Oh, S. W. Hwang, D. Ahn

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

We report electronic characterization of stacked InAs self-assembled quantum dots (SAQDs) embedded in GaAs, using ultra-short pulses. Electrical pulse trains with the width ranging from 50 to 500 ps were applied on the waveguide-type top electrode and the average substrate current was monitored. The current showed staircases and oscillatory features as a function of the pulse width. The staircase could represent single electron injection into SAQDs and the observed oscillatory features could be related with temporal change of electronic occupation in quantum states of SAQDs.

Original languageEnglish
Pages (from-to)460-463
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
StatePublished - Mar 2004
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 14 Jul 200318 Jul 2003

Keywords

  • Electrical pulse
  • Self-assembled quantum dot
  • Time domain

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