Transport spectroscopy of a quantum dot in a silicon-on-insulator (SOI) MOSFET

Y. S. Yu, D. H. Kim, J. D. Lee, B. G. Park, S. W. Hwang, D. Ahn

Research output: Contribution to journalArticlepeer-review


We report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect- transistor (MOSFET). The differential conductance G measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD. The discrete energy levels extracted from the differential conductance characteristics agree well with those estimated from a harmonic oscillator approximation. The separation between energy levels is confirmed by using a potential shape extracted from a 3-dimensional device simulation.

Original languageEnglish
Pages (from-to)885-888
Number of pages4
JournalJournal of the Korean Physical Society
Issue number3
StatePublished - Mar 2007


  • Energy level
  • Harmonic oscillator
  • Single-electron transistor
  • Transport spectroscopy


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