Transport spectroscopy of a quantum dot in a silicon-on-insulator (SOI) MOSFET

Y. S. Yu; D. H. Kim; J. D. Lee; B. G. Park; S. W. Hwang; D. Ahn

doi:10.3938/jkps.50.885

Transport spectroscopy of a quantum dot in a silicon-on-insulator (SOI) MOSFET

Y. S. Yu, D. H. Kim, J. D. Lee, B. G. Park, S. W. Hwang, D. Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect- transistor (MOSFET). The differential conductance G measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD. The discrete energy levels extracted from the differential conductance characteristics agree well with those estimated from a harmonic oscillator approximation. The separation between energy levels is confirmed by using a potential shape extracted from a 3-dimensional device simulation.

Original language	English
Pages (from-to)	885-888
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.885
State	Published - Mar 2007

Keywords

Energy level
Harmonic oscillator
Single-electron transistor
Transport spectroscopy

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title = "Transport spectroscopy of a quantum dot in a silicon-on-insulator (SOI) MOSFET",

abstract = "We report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect- transistor (MOSFET). The differential conductance G measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD. The discrete energy levels extracted from the differential conductance characteristics agree well with those estimated from a harmonic oscillator approximation. The separation between energy levels is confirmed by using a potential shape extracted from a 3-dimensional device simulation.",

keywords = "Energy level, Harmonic oscillator, Single-electron transistor, Transport spectroscopy",

author = "Yu, {Y. S.} and Kim, {D. H.} and Lee, {J. D.} and Park, {B. G.} and Hwang, {S. W.} and D. Ahn",

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AU - Yu, Y. S.

AU - Kim, D. H.

AU - Lee, J. D.

AU - Park, B. G.

AU - Hwang, S. W.

AU - Ahn, D.

PY - 2007/3

Y1 - 2007/3

N2 - We report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect- transistor (MOSFET). The differential conductance G measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD. The discrete energy levels extracted from the differential conductance characteristics agree well with those estimated from a harmonic oscillator approximation. The separation between energy levels is confirmed by using a potential shape extracted from a 3-dimensional device simulation.

AB - We report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect- transistor (MOSFET). The differential conductance G measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD. The discrete energy levels extracted from the differential conductance characteristics agree well with those estimated from a harmonic oscillator approximation. The separation between energy levels is confirmed by using a potential shape extracted from a 3-dimensional device simulation.

KW - Energy level

KW - Harmonic oscillator

KW - Single-electron transistor

KW - Transport spectroscopy

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SP - 885

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Transport spectroscopy of a quantum dot in a silicon-on-insulator (SOI) MOSFET

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Keywords

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