Transport study of ultra-thin SOI MOSFETs

B. Naser; K. H. Cho; S. W. Hwang; J. P. Bird; D. K. Ferry; S. M. Goodnick; B. G. Park; D. Ahn

doi:10.1016/S1386-9477(03)00326-6

Transport study of ultra-thin SOI MOSFETs

B. Naser, K. H. Cho, S. W. Hwang, J. P. Bird, D. K. Ferry, S. M. Goodnick, B. G. Park, D. Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μ_eff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μ_eff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO₂) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.

Original language	English
Pages (from-to)	39-43
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	19
Issue number	1-2
DOIs	https://doi.org/10.1016/S1386-9477(03)00326-6
State	Published - Jul 2003
Event	Fourth International Symposium on Nanostructures and Mesoscopi - Tempe, AZ, United States Duration: 17 Feb 2003 → 21 Feb 2003

Keywords

Effective mobility
SOI
Temperature

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10.1016/S1386-9477(03)00326-6

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title = "Transport study of ultra-thin SOI MOSFETs",

abstract = "We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.",

keywords = "Effective mobility, SOI, Temperature",

author = "B. Naser and Cho, {K. H.} and Hwang, {S. W.} and Bird, {J. P.} and Ferry, {D. K.} and Goodnick, {S. M.} and Park, {B. G.} and D. Ahn",

year = "2003",

month = jul,

doi = "10.1016/S1386-9477(03)00326-6",

language = "English",

volume = "19",

pages = "39--43",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-2",

note = "Fourth International Symposium on Nanostructures and Mesoscopi ; Conference date: 17-02-2003 Through 21-02-2003",

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TY - JOUR

T1 - Transport study of ultra-thin SOI MOSFETs

AU - Naser, B.

AU - Cho, K. H.

AU - Hwang, S. W.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Goodnick, S. M.

AU - Park, B. G.

AU - Ahn, D.

PY - 2003/7

Y1 - 2003/7

N2 - We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.

AB - We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.

KW - Effective mobility

KW - SOI

KW - Temperature

UR - http://www.scopus.com/inward/record.url?scp=0042510473&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(03)00326-6

DO - 10.1016/S1386-9477(03)00326-6

M3 - Conference article

AN - SCOPUS:0042510473

SN - 1386-9477

VL - 19

SP - 39

EP - 43

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2

T2 - Fourth International Symposium on Nanostructures and Mesoscopi

Y2 - 17 February 2003 through 21 February 2003

ER -

Transport study of ultra-thin SOI MOSFETs

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Keywords

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