Tunable Wetting Property in Growth Mode-Controlled WS2 Thin Films

Byoung Ki Choi; In Hak Lee; Jiho Kim; Young Jun Chang

doi:10.1186/s11671-017-2030-z

Tunable Wetting Property in Growth Mode-Controlled WS₂ Thin Films

Byoung Ki Choi, In Hak Lee, Jiho Kim, Young Jun Chang

Department of Physics

University of Seoul

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report on a thickness-dependent wetting property of WS₂/Al₂O₃ and WS₂/SiO₂/Si structures. We prepared WS₂ films with gradient thickness by annealing thickness-controlled WO₃ films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness of WS₂ over substrates several centimeters in dimension. On fresh surfaces, we observed a significant change in the water contact angle depending on film thickness and substrate. Transmission electron microscopy analysis showed that differences in the surface roughness of WS₂ films can account for the contrasting wetting properties between WS₂/Al₂O₃ and WS₂/SiO₂/Si. The thickness dependence of water contact angle persisted for longer than 2 weeks, which demonstrates the stability of these wetting properties when exposed to air contamination.

Original language	English
Article number	262
Journal	Nanoscale Research Letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1186/s11671-017-2030-z
State	Published - 1 Dec 2017

Keywords

Chemical vapor deposition
Morphology control
Raman spectroscopy
Transmission electron microscopy
WS
Wetting property

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10.1186/s11671-017-2030-z

Cite this

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title = "Tunable Wetting Property in Growth Mode-Controlled WS2 Thin Films",

abstract = "We report on a thickness-dependent wetting property of WS2/Al2O3 and WS2/SiO2/Si structures. We prepared WS2 films with gradient thickness by annealing thickness-controlled WO3 films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness of WS2 over substrates several centimeters in dimension. On fresh surfaces, we observed a significant change in the water contact angle depending on film thickness and substrate. Transmission electron microscopy analysis showed that differences in the surface roughness of WS2 films can account for the contrasting wetting properties between WS2/Al2O3 and WS2/SiO2/Si. The thickness dependence of water contact angle persisted for longer than 2 weeks, which demonstrates the stability of these wetting properties when exposed to air contamination.",

keywords = "Chemical vapor deposition, Morphology control, Raman spectroscopy, Transmission electron microscopy, WS, Wetting property",

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AU - Choi, Byoung Ki

AU - Lee, In Hak

AU - Kim, Jiho

AU - Chang, Young Jun

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N2 - We report on a thickness-dependent wetting property of WS2/Al2O3 and WS2/SiO2/Si structures. We prepared WS2 films with gradient thickness by annealing thickness-controlled WO3 films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness of WS2 over substrates several centimeters in dimension. On fresh surfaces, we observed a significant change in the water contact angle depending on film thickness and substrate. Transmission electron microscopy analysis showed that differences in the surface roughness of WS2 films can account for the contrasting wetting properties between WS2/Al2O3 and WS2/SiO2/Si. The thickness dependence of water contact angle persisted for longer than 2 weeks, which demonstrates the stability of these wetting properties when exposed to air contamination.

AB - We report on a thickness-dependent wetting property of WS2/Al2O3 and WS2/SiO2/Si structures. We prepared WS2 films with gradient thickness by annealing thickness-controlled WO3 films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness of WS2 over substrates several centimeters in dimension. On fresh surfaces, we observed a significant change in the water contact angle depending on film thickness and substrate. Transmission electron microscopy analysis showed that differences in the surface roughness of WS2 films can account for the contrasting wetting properties between WS2/Al2O3 and WS2/SiO2/Si. The thickness dependence of water contact angle persisted for longer than 2 weeks, which demonstrates the stability of these wetting properties when exposed to air contamination.

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KW - Morphology control

KW - Raman spectroscopy

KW - Transmission electron microscopy

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Tunable Wetting Property in Growth Mode-Controlled WS₂ Thin Films

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Keywords

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