Tunable Wetting Property in Growth Mode-Controlled WS2 Thin Films

Byoung Ki Choi, In Hak Lee, Jiho Kim, Young Jun Chang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We report on a thickness-dependent wetting property of WS2/Al2O3 and WS2/SiO2/Si structures. We prepared WS2 films with gradient thickness by annealing thickness-controlled WO3 films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness of WS2 over substrates several centimeters in dimension. On fresh surfaces, we observed a significant change in the water contact angle depending on film thickness and substrate. Transmission electron microscopy analysis showed that differences in the surface roughness of WS2 films can account for the contrasting wetting properties between WS2/Al2O3 and WS2/SiO2/Si. The thickness dependence of water contact angle persisted for longer than 2 weeks, which demonstrates the stability of these wetting properties when exposed to air contamination.

Original languageEnglish
Article number262
JournalNanoscale Research Letters
Issue number1
StatePublished - 1 Dec 2017


  • Chemical vapor deposition
  • Morphology control
  • Raman spectroscopy
  • Transmission electron microscopy
  • WS
  • Wetting property


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