Tungsten-doped zinc oxide and indium-zinc oxide films as high-performance electron-transport layers in N-I-P perovskite solar cells

Ju Hwan Kang, Aeran Song, Yu Jung Park, Jung Hwa Seo, Bright Walker, Kwun Bum Chung

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Perovskite solar cells (PSCs) have attracted tremendous research attention due to their potential as a next-generation photovoltaic cell. Transition metal oxides in N-I-P structures have been widely used as electron-transporting materials but the need for a high-temperature sintering step is incompatible with flexible substrate materials and perovskite materials which cannot withstand elevated temperatures. In this work, novel metal oxides prepared by sputtering deposition were investigated as electron-transport layers in planar PSCs with the N-I-P structure. The incorporation of tungsten in the oxide layer led to a power conversion efficiency (PCE) increase from 8.23% to 16.05% due to the enhanced electron transfer and reduced back-recombination. Scanning electron microscope (SEM) images reveal that relatively large grain sizes in the perovskite phase with small grain boundaries were formed when the perovskite was deposited on tungsten-doped films. This study demonstrates that novel metal oxides can be used as in perovskite devices as electron transfer layers to improve the efficiency.

Original languageEnglish
Article number737
JournalPolymers
Volume12
Issue number4
DOIs
StatePublished - 1 Apr 2020

Keywords

  • Perovskite solar cell
  • Transparent metal oxide
  • Tungsten-doped InZnO
  • Zinc-oxynitride

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