Tunnel fin field-effect transistor with epitaxial silicon and asymmetric gate

Won Joo Lee, Hui Tae Kwon, Dae Hoon Wee, Yoon Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


This paper proposes a new structure of a tunnel field-effect transistor (TFET). Unlike conventional TFETs, the proposed structure has unique features, such as an epitaxial-silicon layer and an AG near the source region. Using a technology computer-aided design (TCAD) simulation, the superiority of the proposed device was proven. The designed device provided an approximately 3 times higher on-current and an average subthreshold swing (SSavg of 47.4 mV/dec. The ambipolar-leakage current could be reduced to almost zero. In addition, the fabrication process of the device was designed.

Original languageEnglish
Pages (from-to)7087-7092
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Issue number10
StatePublished - Oct 2017


  • Ambipolar Behavior
  • Asymmetric Gate
  • Epitaxial Silicon
  • Tunnel Fin Field-Effect Transistor (T-FinFET)


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