Tunnel fin field-effect transistor with epitaxial silicon and asymmetric gate

Won Joo Lee; Hui Tae Kwon; Dae Hoon Wee; Yoon Kim

doi:10.1166/jnn.2017.14722

Tunnel fin field-effect transistor with epitaxial silicon and asymmetric gate

Won Joo Lee, Hui Tae Kwon, Dae Hoon Wee, Yoon Kim

School of Electrical and Computer Engineering

Pusan National University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This paper proposes a new structure of a tunnel field-effect transistor (TFET). Unlike conventional TFETs, the proposed structure has unique features, such as an epitaxial-silicon layer and an AG near the source region. Using a technology computer-aided design (TCAD) simulation, the superiority of the proposed device was proven. The designed device provided an approximately 3 times higher on-current and an average subthreshold swing (SS_avg of 47.4 mV/dec. The ambipolar-leakage current could be reduced to almost zero. In addition, the fabrication process of the device was designed.

Original language	English
Pages (from-to)	7087-7092
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2017.14722
State	Published - Oct 2017

Keywords

Ambipolar Behavior
Asymmetric Gate
Epitaxial Silicon
Tunnel Fin Field-Effect Transistor (T-FinFET)

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10.1166/jnn.2017.14722

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title = "Tunnel fin field-effect transistor with epitaxial silicon and asymmetric gate",

abstract = "This paper proposes a new structure of a tunnel field-effect transistor (TFET). Unlike conventional TFETs, the proposed structure has unique features, such as an epitaxial-silicon layer and an AG near the source region. Using a technology computer-aided design (TCAD) simulation, the superiority of the proposed device was proven. The designed device provided an approximately 3 times higher on-current and an average subthreshold swing (SSavg of 47.4 mV/dec. The ambipolar-leakage current could be reduced to almost zero. In addition, the fabrication process of the device was designed.",

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author = "Lee, {Won Joo} and Kwon, {Hui Tae} and Wee, {Dae Hoon} and Yoon Kim",

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AU - Lee, Won Joo

AU - Kwon, Hui Tae

AU - Wee, Dae Hoon

AU - Kim, Yoon

PY - 2017/10

Y1 - 2017/10

N2 - This paper proposes a new structure of a tunnel field-effect transistor (TFET). Unlike conventional TFETs, the proposed structure has unique features, such as an epitaxial-silicon layer and an AG near the source region. Using a technology computer-aided design (TCAD) simulation, the superiority of the proposed device was proven. The designed device provided an approximately 3 times higher on-current and an average subthreshold swing (SSavg of 47.4 mV/dec. The ambipolar-leakage current could be reduced to almost zero. In addition, the fabrication process of the device was designed.

AB - This paper proposes a new structure of a tunnel field-effect transistor (TFET). Unlike conventional TFETs, the proposed structure has unique features, such as an epitaxial-silicon layer and an AG near the source region. Using a technology computer-aided design (TCAD) simulation, the superiority of the proposed device was proven. The designed device provided an approximately 3 times higher on-current and an average subthreshold swing (SSavg of 47.4 mV/dec. The ambipolar-leakage current could be reduced to almost zero. In addition, the fabrication process of the device was designed.

KW - Ambipolar Behavior

KW - Asymmetric Gate

KW - Epitaxial Silicon

KW - Tunnel Fin Field-Effect Transistor (T-FinFET)

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EP - 7092

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 10

ER -

Tunnel fin field-effect transistor with epitaxial silicon and asymmetric gate

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Keywords

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