U-shaped reconfigurable field-effect transistor

Daehoon Wee, Hui Tae Kwon, Won Joo Lee, Hyun Seok Choi, Yu Jeong Park, Boram Kim, Yoon Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We propose a novel reconfigurable field-effect transistor (RFET) featuring two vertically-stacked gates and a U-shaped nanowire channel. Conventional RFETs have a relatively large unit cell size due to their configuration with multiple gates. However, the proposed device can solve this inherent disadvantage of RFET. In addition, it can have a long enough channel without additional area, so that excellent characteristics can be obtained without the short channel effects. The characteristics of the proposed device were examined by 3-D technology computer-aided design (TCAD) device simulation. The effect of some device parameters on the device performance were investigated. Also, the fabrication method is proposed.

Original languageEnglish
Pages (from-to)63-68
Number of pages6
JournalJournal of Semiconductor Technology and Science
Issue number1
StatePublished - Feb 2019


  • 3-D MOSFET
  • Reconfigurable filed-effect transistor (RFET)
  • Vertically stacked gates


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