Abstract
We propose a novel reconfigurable field-effect transistor (RFET) featuring two vertically-stacked gates and a U-shaped nanowire channel. Conventional RFETs have a relatively large unit cell size due to their configuration with multiple gates. However, the proposed device can solve this inherent disadvantage of RFET. In addition, it can have a long enough channel without additional area, so that excellent characteristics can be obtained without the short channel effects. The characteristics of the proposed device were examined by 3-D technology computer-aided design (TCAD) device simulation. The effect of some device parameters on the device performance were investigated. Also, the fabrication method is proposed.
Original language | English |
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Pages (from-to) | 63-68 |
Number of pages | 6 |
Journal | Journal of Semiconductor Technology and Science |
Volume | 19 |
Issue number | 1 |
DOIs | |
State | Published - Feb 2019 |
Keywords
- 3-D MOSFET
- Reconfigurable filed-effect transistor (RFET)
- Vertically stacked gates