Ultrafast metal-insulator-multi-wall carbon nanotube tunneling diode employing asymmetrical structure effect

Jeong Hee Shin; Jaehan Im; Ji Woong Choi; Hyun Sik Kim; Jung Inn Sohn; Seung Nam Cha; Jae Eun Jang

doi:10.1016/j.carbon.2016.02.035

Ultrafast metal-insulator-multi-wall carbon nanotube tunneling diode employing asymmetrical structure effect

Jeong Hee Shin, Jaehan Im, Ji Woong Choi, Hyun Sik Kim, Jung Inn Sohn, Seung Nam Cha, Jae Eun Jang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Ultra-fast diode structures based on non-semiconductive materials employing tunneling mechanism have been investigated. Applying the structurally asymmetric effect of multi-wall carbon nanotube (MWCNT) to a vertical metal-insulator-MWCNT (MIC) tunneling diode structure, the 'on-off' ratio (∼10⁴) and the current density (38.2 MA/cm²) are drastically enhanced compared to those of conventional metal-insulator-metal (MIM) tunneling diodes. The electrical characteristics are stable up to 423 K. Experimentally, rectifying performance of the MIC diode is good up to 10 MHz and the cut-off frequency of the MIC diode is estimated to be 6.47 THz. The growth process of MWCNT is more controllable for the number and the position than that of SWCNT. Therefore, it has a high probability of realization. The vertically aligned single MWCNT design can guarantee an ultra-high integration density, as well. Therefore, the MIC diode can be applied to various high frequency applications, such as communication devices, high speed electrical switches, and high performance control process units (CPUs), or other new concept devices.

Original language	English
Pages (from-to)	172-180
Number of pages	9
Journal	Carbon
Volume	102
DOIs	https://doi.org/10.1016/j.carbon.2016.02.035
State	Published - 1 Jun 2016

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@article{85e6f725de564dd5ae94100a70ccf686,

title = "Ultrafast metal-insulator-multi-wall carbon nanotube tunneling diode employing asymmetrical structure effect",

abstract = "Ultra-fast diode structures based on non-semiconductive materials employing tunneling mechanism have been investigated. Applying the structurally asymmetric effect of multi-wall carbon nanotube (MWCNT) to a vertical metal-insulator-MWCNT (MIC) tunneling diode structure, the 'on-off' ratio (∼104) and the current density (38.2 MA/cm2) are drastically enhanced compared to those of conventional metal-insulator-metal (MIM) tunneling diodes. The electrical characteristics are stable up to 423 K. Experimentally, rectifying performance of the MIC diode is good up to 10 MHz and the cut-off frequency of the MIC diode is estimated to be 6.47 THz. The growth process of MWCNT is more controllable for the number and the position than that of SWCNT. Therefore, it has a high probability of realization. The vertically aligned single MWCNT design can guarantee an ultra-high integration density, as well. Therefore, the MIC diode can be applied to various high frequency applications, such as communication devices, high speed electrical switches, and high performance control process units (CPUs), or other new concept devices.",

author = "Shin, {Jeong Hee} and Jaehan Im and Choi, {Ji Woong} and Kim, {Hyun Sik} and Sohn, {Jung Inn} and Cha, {Seung Nam} and Jang, {Jae Eun}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd.",

year = "2016",

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day = "1",

doi = "10.1016/j.carbon.2016.02.035",

language = "English",

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T1 - Ultrafast metal-insulator-multi-wall carbon nanotube tunneling diode employing asymmetrical structure effect

AU - Shin, Jeong Hee

AU - Im, Jaehan

AU - Choi, Ji Woong

AU - Kim, Hyun Sik

AU - Sohn, Jung Inn

AU - Cha, Seung Nam

AU - Jang, Jae Eun

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Ultra-fast diode structures based on non-semiconductive materials employing tunneling mechanism have been investigated. Applying the structurally asymmetric effect of multi-wall carbon nanotube (MWCNT) to a vertical metal-insulator-MWCNT (MIC) tunneling diode structure, the 'on-off' ratio (∼104) and the current density (38.2 MA/cm2) are drastically enhanced compared to those of conventional metal-insulator-metal (MIM) tunneling diodes. The electrical characteristics are stable up to 423 K. Experimentally, rectifying performance of the MIC diode is good up to 10 MHz and the cut-off frequency of the MIC diode is estimated to be 6.47 THz. The growth process of MWCNT is more controllable for the number and the position than that of SWCNT. Therefore, it has a high probability of realization. The vertically aligned single MWCNT design can guarantee an ultra-high integration density, as well. Therefore, the MIC diode can be applied to various high frequency applications, such as communication devices, high speed electrical switches, and high performance control process units (CPUs), or other new concept devices.

AB - Ultra-fast diode structures based on non-semiconductive materials employing tunneling mechanism have been investigated. Applying the structurally asymmetric effect of multi-wall carbon nanotube (MWCNT) to a vertical metal-insulator-MWCNT (MIC) tunneling diode structure, the 'on-off' ratio (∼104) and the current density (38.2 MA/cm2) are drastically enhanced compared to those of conventional metal-insulator-metal (MIM) tunneling diodes. The electrical characteristics are stable up to 423 K. Experimentally, rectifying performance of the MIC diode is good up to 10 MHz and the cut-off frequency of the MIC diode is estimated to be 6.47 THz. The growth process of MWCNT is more controllable for the number and the position than that of SWCNT. Therefore, it has a high probability of realization. The vertically aligned single MWCNT design can guarantee an ultra-high integration density, as well. Therefore, the MIC diode can be applied to various high frequency applications, such as communication devices, high speed electrical switches, and high performance control process units (CPUs), or other new concept devices.

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DO - 10.1016/j.carbon.2016.02.035

M3 - Article

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SN - 0008-6223

VL - 102

SP - 172

EP - 180

JO - Carbon

JF - Carbon

ER -

Ultrafast metal-insulator-multi-wall carbon nanotube tunneling diode employing asymmetrical structure effect

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