Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

Jonghoo Park; Tae Wan Kim; Guen Hyung Oh; Jin Gi An; Sang Il Kim; Jae Cheol Shin

doi:10.1021/ACSAELM.2C01277

Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

Jonghoo Park, Tae Wan Kim, Guen Hyung Oh, Jin Gi An, Sang Il Kim, Jae Cheol Shin

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors are promising materials for realizing band-to-band tunneling devices owing to the atomically thin layer and abrupt interface of their heterostructures. In this study, we transferred scalable few-atomic-layer thin films using metal-organic chemical vapor deposition (MOCVD)-grown molybdenum disulfide (MoS₂) as an n-channel and CVD-grown molybdenum ditelluride (MoTe₂) and tungsten diselenide (WSe₂) as p-channels to build van der Waals vertical heterostructures. The heterostructures of intrinsic MoS₂ and MoTe₂ (or WSe₂), each having n-type, ambipolar, or high p-type conductivity, were suitable for tunneling field-effect transistor (TFET) applications. We measured the electrical transport properties of the MoS₂/MoTe₂ (or WSe₂) heterostructures using an ion-gel top gate. The fabricated TFET with MoS₂/MoTe₂ (or WSe₂) heterostructures exhibits a subthreshold swing as low as 9.1 (or 7.5) mV/dec. The negative differential transconductance, negative differential resistance, and temperature-dependent I−V characteristics demonstrate the band-to-band tunneling process. The findings have significant potential for applications in the large-area production of next-generation wearable, stretchable, and flexible low-power electronic devices.

Original language	English
Pages (from-to)	196-204
Number of pages	9
Journal	ACS Applied Electronic Materials
Volume	5
Issue number	1
DOIs	https://doi.org/10.1021/ACSAELM.2C01277
State	Published - 24 Jan 2023

Keywords

2D heterostructure
ion-gel dielectric
low power consumption device
subthreshold swing
transition-metal dichalcogenides
tunneling FET

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10.1021/ACSAELM.2C01277

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title = "Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics",

abstract = "Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors are promising materials for realizing band-to-band tunneling devices owing to the atomically thin layer and abrupt interface of their heterostructures. In this study, we transferred scalable few-atomic-layer thin films using metal-organic chemical vapor deposition (MOCVD)-grown molybdenum disulfide (MoS2) as an n-channel and CVD-grown molybdenum ditelluride (MoTe2) and tungsten diselenide (WSe2) as p-channels to build van der Waals vertical heterostructures. The heterostructures of intrinsic MoS2 and MoTe2 (or WSe2), each having n-type, ambipolar, or high p-type conductivity, were suitable for tunneling field-effect transistor (TFET) applications. We measured the electrical transport properties of the MoS2/MoTe2 (or WSe2) heterostructures using an ion-gel top gate. The fabricated TFET with MoS2/MoTe2 (or WSe2) heterostructures exhibits a subthreshold swing as low as 9.1 (or 7.5) mV/dec. The negative differential transconductance, negative differential resistance, and temperature-dependent I−V characteristics demonstrate the band-to-band tunneling process. The findings have significant potential for applications in the large-area production of next-generation wearable, stretchable, and flexible low-power electronic devices.",

keywords = "2D heterostructure, ion-gel dielectric, low power consumption device, subthreshold swing, transition-metal dichalcogenides, tunneling FET",

author = "Jonghoo Park and Kim, {Tae Wan} and Oh, {Guen Hyung} and An, {Jin Gi} and Kim, {Sang Il} and Shin, {Jae Cheol}",

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T1 - Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

AU - Park, Jonghoo

AU - Kim, Tae Wan

AU - Oh, Guen Hyung

AU - An, Jin Gi

AU - Kim, Sang Il

AU - Shin, Jae Cheol

PY - 2023/1/24

Y1 - 2023/1/24

N2 - Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors are promising materials for realizing band-to-band tunneling devices owing to the atomically thin layer and abrupt interface of their heterostructures. In this study, we transferred scalable few-atomic-layer thin films using metal-organic chemical vapor deposition (MOCVD)-grown molybdenum disulfide (MoS2) as an n-channel and CVD-grown molybdenum ditelluride (MoTe2) and tungsten diselenide (WSe2) as p-channels to build van der Waals vertical heterostructures. The heterostructures of intrinsic MoS2 and MoTe2 (or WSe2), each having n-type, ambipolar, or high p-type conductivity, were suitable for tunneling field-effect transistor (TFET) applications. We measured the electrical transport properties of the MoS2/MoTe2 (or WSe2) heterostructures using an ion-gel top gate. The fabricated TFET with MoS2/MoTe2 (or WSe2) heterostructures exhibits a subthreshold swing as low as 9.1 (or 7.5) mV/dec. The negative differential transconductance, negative differential resistance, and temperature-dependent I−V characteristics demonstrate the band-to-band tunneling process. The findings have significant potential for applications in the large-area production of next-generation wearable, stretchable, and flexible low-power electronic devices.

AB - Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors are promising materials for realizing band-to-band tunneling devices owing to the atomically thin layer and abrupt interface of their heterostructures. In this study, we transferred scalable few-atomic-layer thin films using metal-organic chemical vapor deposition (MOCVD)-grown molybdenum disulfide (MoS2) as an n-channel and CVD-grown molybdenum ditelluride (MoTe2) and tungsten diselenide (WSe2) as p-channels to build van der Waals vertical heterostructures. The heterostructures of intrinsic MoS2 and MoTe2 (or WSe2), each having n-type, ambipolar, or high p-type conductivity, were suitable for tunneling field-effect transistor (TFET) applications. We measured the electrical transport properties of the MoS2/MoTe2 (or WSe2) heterostructures using an ion-gel top gate. The fabricated TFET with MoS2/MoTe2 (or WSe2) heterostructures exhibits a subthreshold swing as low as 9.1 (or 7.5) mV/dec. The negative differential transconductance, negative differential resistance, and temperature-dependent I−V characteristics demonstrate the band-to-band tunneling process. The findings have significant potential for applications in the large-area production of next-generation wearable, stretchable, and flexible low-power electronic devices.

KW - 2D heterostructure

KW - ion-gel dielectric

KW - low power consumption device

KW - subthreshold swing

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KW - tunneling FET

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JF - ACS Applied Electronic Materials

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ER -

Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

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Keywords

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