Utilization of a-Si:H switching diodes for signal readout from a-Si:H pixel detectors

Gyuseong Cho, J. S. Drewery, W. S. Hong, T. Jing, H. Lee, S. N. Kaplan, A. Mireshghi, V. Perez-Mendez, D. Wildermuth

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

Two-dimensional arrays of amorphous silicon photodiodes can be used as position-sensitive radiation detectors when they are coupled to an appropriate phosphor. We have developed signal readout schemes from amorphous silicon photodiode arrays utilizing one or two switching diodes attached to each pixel photodiode. Individual cells and prototype arrays of amorphous silicon photodiodes with single- and double-diode switching readout were fabricated and tested. A charge storage time and a readout time were measured. The measurement results were analyzed by simple circuit theory.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology
PublisherPubl by Materials Research Society
Pages969-974
Number of pages6
ISBN (Print)155899193X, 9781558991934
DOIs
StatePublished - 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: 13 Apr 199316 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume297
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA
Period13/04/9316/04/93

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