Abstract
The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light (< 1 μsec) which simulates the transit of an energetic charged particle, and the other for rather long pulses of light (1 msec) which simulates x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of 3 approx. 9 for short pulses and a few hundred for long pulses at a dark current level of 10 mA/cm2. Various gain results are discussed in terms of the device structure, applied bias and dark current.
Original language | English |
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Pages (from-to) | 767-772 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 377 |
DOIs | |
State | Published - 1995 |
Event | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 18 Apr 1995 → 21 Apr 1995 |