Utilization of photoconductive gain in a-Si:H devices for radiation detection

H. K. Lee, J. S. Drewery, W. S. Hong, T. Jing, S. N. Kaplan, V. Perez-Mendez

Research output: Contribution to journalConference articlepeer-review

Abstract

The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light (< 1 μsec) which simulates the transit of an energetic charged particle, and the other for rather long pulses of light (1 msec) which simulates x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of 3 approx. 9 for short pulses and a few hundred for long pulses at a dark current level of 10 mA/cm2. Various gain results are discussed in terms of the device structure, applied bias and dark current.

Original languageEnglish
Pages (from-to)767-772
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume377
DOIs
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 18 Apr 199521 Apr 1995

Fingerprint

Dive into the research topics of 'Utilization of photoconductive gain in a-Si:H devices for radiation detection'. Together they form a unique fingerprint.

Cite this