Van der Waals Heteroepitaxy of Te Crystallites/2H-MoTe2 Atomically Thin Films on GaAs Substrates by Using Metal-Organic Chemical-Vapor Deposition

Tae Wan Kim, Donghwan Kim, Yonghee Jo, Jonghoo Park, Hyun Seok Kim, Chae Ho Shin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Te crystallites/few atomic-layer MoTe2 films grown on (100) GaAs substrates by using metal-organic chemical — vapor deposition (MOCVD) were investigated. MOCVD provides high-quality films, controllable film thickness, composition uniformity, and scalability to wafer scale size via the pyrolysis process of metal-organic sources. We observed several tens of nanometers of Te crystallites/three atomic layers 2H phase MoTe2 on the GaAs substrates. This observation was confirmed by using Raman spectroscopy, X-ray photoemission spectroscopy (XPS), atomic force microscopy, cross-sectional scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. A two-dimensional transition-metal dichalcogenide deposited on GaAs by using the van der Waals epitaxy is a promising method for the development of future high-performance optoelectronic and electronic devices.

Original languageEnglish
Pages (from-to)167-170
Number of pages4
JournalJournal of the Korean Physical Society
Volume76
Issue number2
DOIs
StatePublished - 1 Jan 2020

Keywords

  • Heterostructure
  • III-V semiconductor
  • MOCVD
  • MoTe
  • TMDs

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