Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory

Se Hwan Park; Yoon Kim; Wandong Kim; Joo Yun Seo; Byung Gook Park

doi:10.1016/j.sse.2012.05.031

Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory

Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length. The VCSTAR, by using an ultra-thin body structure, can reduce the off-current level, and planar cell of VCSTAR assures insensitivity to process variables such as etch-slope. The performance of designed structure is described and the optimization of device parameter is performed by using TCAD simulation. To increase device performance and ease of fabrication, the modified fabrication method to reduce the spacing between gates is also introduced. front matter

Original language	English
Pages (from-to)	34-38
Number of pages	5
Journal	Solid-State Electronics
Volume	78
DOIs	https://doi.org/10.1016/j.sse.2012.05.031
State	Published - Dec 2012

Keywords

3D NAND flash memory
Ultra-thin body
Vertical channel
Word-line stacking

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10.1016/j.sse.2012.05.031

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title = "Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory",

abstract = "A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length. The VCSTAR, by using an ultra-thin body structure, can reduce the off-current level, and planar cell of VCSTAR assures insensitivity to process variables such as etch-slope. The performance of designed structure is described and the optimization of device parameter is performed by using TCAD simulation. To increase device performance and ease of fabrication, the modified fabrication method to reduce the spacing between gates is also introduced. front matter",

keywords = "3D NAND flash memory, Ultra-thin body, Vertical channel, Word-line stacking",

author = "Park, {Se Hwan} and Yoon Kim and Wandong Kim and Seo, {Joo Yun} and Park, {Byung Gook}",

year = "2012",

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AU - Park, Se Hwan

AU - Kim, Yoon

AU - Kim, Wandong

AU - Seo, Joo Yun

AU - Park, Byung Gook

PY - 2012/12

Y1 - 2012/12

N2 - A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length. The VCSTAR, by using an ultra-thin body structure, can reduce the off-current level, and planar cell of VCSTAR assures insensitivity to process variables such as etch-slope. The performance of designed structure is described and the optimization of device parameter is performed by using TCAD simulation. To increase device performance and ease of fabrication, the modified fabrication method to reduce the spacing between gates is also introduced. front matter

AB - A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length. The VCSTAR, by using an ultra-thin body structure, can reduce the off-current level, and planar cell of VCSTAR assures insensitivity to process variables such as etch-slope. The performance of designed structure is described and the optimization of device parameter is performed by using TCAD simulation. To increase device performance and ease of fabrication, the modified fabrication method to reduce the spacing between gates is also introduced. front matter

KW - 3D NAND flash memory

KW - Ultra-thin body

KW - Vertical channel

KW - Word-line stacking

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VL - 78

SP - 34

EP - 38

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory

Abstract

Keywords

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