Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory

Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length. The VCSTAR, by using an ultra-thin body structure, can reduce the off-current level, and planar cell of VCSTAR assures insensitivity to process variables such as etch-slope. The performance of designed structure is described and the optimization of device parameter is performed by using TCAD simulation. To increase device performance and ease of fabrication, the modified fabrication method to reduce the spacing between gates is also introduced. front matter

Original languageEnglish
Pages (from-to)34-38
Number of pages5
JournalSolid-State Electronics
StatePublished - Dec 2012


  • 3D NAND flash memory
  • Ultra-thin body
  • Vertical channel
  • Word-line stacking


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