Viable strategy to minimize trap states of patterned oxide thin films for both exceptional electrical performance and uniformity in sol–gel processed transistors

Do Kyung Kim, Kyeong Ho Seo, Dae Hyeon Kwon, Sang Hwa Jeon, Yu Jin Hwang, Ziyuan Wang, Jaehoon Park, Sin Hyung Lee, Jaewon Jang, In Man Kang, Xue Zhang, Jin Hyuk Bae

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A sustainable water etchant-based photopatterning method is proposed to achieve simultaneous oxide film patterning and remarkably minimize trap states of dielectric and semiconductor oxide films. By exquisitely controlling each processing parameter, well-defined aluminum oxide (AlOx) dielectric and indium oxide (InOx) semiconductor patterns are formed, despite using acid-free pure water etchant. The water etchant not only dissolves the nonultraviolet-irradiated regions but also promotes an effective hydrolysis reaction of irradiated regions, thereby forming low-defect oxide patterns. As a result, frequency-stable AlOx capacitors with low leakage current and high-performance bias-stable InOx TFTs with low activation energy are fabricated. In particular, photopatterned enhancement-mode InOx TFTs exhibit remarkably improved electrical properties, stability, and uniformity—15-fold higher saturation mobility and remarkably low coefficient of variation of 12.04 cm2 V−1 s−1 and 25.26%, respectively— compared with nonpatterned TFTs. With the proposed method, 3-V operating high-performance InOx/AlOx TFTs are successfully fabricated at a low processing temperature of 250 °C.

Original languageEnglish
Article number135833
JournalChemical Engineering Journal
Volume441
DOIs
StatePublished - 1 Aug 2022

Keywords

  • High electrical performance
  • Metal-oxides
  • Patterning
  • Sol–gel process
  • Thin-film transistors

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