Wafer-scale production of highly uniform two-dimensional MoS₂ by metal-organic chemical vapor deposition

Semiconducting two-dimensional (2D) materials, particularly extremely thin molybdenum disulfide (MoS₂) films, are attracting considerable attention from academia and industry owing to their distinctive optical and electrical properties. Here, we present the direct growth of a MoS₂ monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO₂/Si wafer. The influences of growth pressure, ambient gases (Ar, H₂), and S/Mo molar flow ratio on the MoS₂ layered growth were explored by considering the domain size, nucleation sites, morphology, and impurity incorporation. Monolayer MoS₂-based field effect transistors achieve an electron mobility of 0.47 cm² V^-1 s^-1 and on/off current ratio of 5.4 × 10⁴. This work demonstrates the potential for reliable wafer-scale production of 2D MoS₂ for practical applications in next-generation electronic and optical devices.