Wafer-scale production of highly uniform two-dimensional MoS2 by metal-organic chemical vapor deposition

Taewan Kim, Jihun Mun, Hyeji Park, Daehwa Joung, Mangesh Diware, Chegal Won, Jonghoo Park, Soo Hwan Jeong, Sang Woo Kang

Research output: Contribution to journalArticlepeer-review

82 Scopus citations


Semiconducting two-dimensional (2D) materials, particularly extremely thin molybdenum disulfide (MoS2) films, are attracting considerable attention from academia and industry owing to their distinctive optical and electrical properties. Here, we present the direct growth of a MoS2 monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO2/Si wafer. The influences of growth pressure, ambient gases (Ar, H2), and S/Mo molar flow ratio on the MoS2 layered growth were explored by considering the domain size, nucleation sites, morphology, and impurity incorporation. Monolayer MoS2-based field effect transistors achieve an electron mobility of 0.47 cm2 V-1 s-1 and on/off current ratio of 5.4 × 104. This work demonstrates the potential for reliable wafer-scale production of 2D MoS2 for practical applications in next-generation electronic and optical devices.

Original languageEnglish
Article number18LT01
Issue number18
StatePublished - 7 Apr 2017


  • MoS
  • electronic transport
  • metal-organic chemical vapor deposition
  • transistion metal dichalcogenides
  • two-dimensional materials
  • van der Waals epitaxy


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