X-ray photoelectron spectroscopy study of Pt-oxide thin films deposited by reactive sputtering using O2/Ar gas mixtures

Min Cherl Jung; Hyeong Do Kim; Moonsup Han; William Jo; Dong Chun Kim

doi:10.1143/jjap.38.4872

X-ray photoelectron spectroscopy study of Pt-oxide thin films deposited by reactive sputtering using O₂/Ar gas mixtures

Min Cherl Jung, Hyeong Do Kim, Moonsup Han, William Jo, Dong Chun Kim

Department of Physics

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46 Scopus citations

Abstract

Thin-film oxides of Pt were grown reactively by rf magnetron sputtering and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Oxygen incorporation of the films was adjusted by controlling the oxygen mixing ratio (OMR). XRD reflections indicated that these samples have an amorphous structure without crystalline ordering of the Pt-O phases. SEM pictures showed that the formation of protrusions appear under the condition of large OMR. The XPS spectra revealed chemical shifts of Pt 4 f peaks, which are ascribed to two different oxidation states of Pt. The amounts of the energy shifts are 1.0 and 2.1 eV, implying that the Pt oxide thin films are composed of PtO grains and intermediate oxides of PtO and PtO₂.

Original language	English
Pages (from-to)	4872-4875
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	8 B
DOIs	https://doi.org/10.1143/jjap.38.4872
State	Published - 15 Aug 1999

Keywords

Microstructure
Oxidation states
Pt
Reactive sputtering
X-ray photoelectron spectroscopy

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title = "X-ray photoelectron spectroscopy study of Pt-oxide thin films deposited by reactive sputtering using O2/Ar gas mixtures",

abstract = "Thin-film oxides of Pt were grown reactively by rf magnetron sputtering and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Oxygen incorporation of the films was adjusted by controlling the oxygen mixing ratio (OMR). XRD reflections indicated that these samples have an amorphous structure without crystalline ordering of the Pt-O phases. SEM pictures showed that the formation of protrusions appear under the condition of large OMR. The XPS spectra revealed chemical shifts of Pt 4 f peaks, which are ascribed to two different oxidation states of Pt. The amounts of the energy shifts are 1.0 and 2.1 eV, implying that the Pt oxide thin films are composed of PtO grains and intermediate oxides of PtO and PtO2.",

keywords = "Microstructure, Oxidation states, Pt, Reactive sputtering, X-ray photoelectron spectroscopy",

author = "Jung, {Min Cherl} and Kim, {Hyeong Do} and Moonsup Han and William Jo and Kim, {Dong Chun}",

year = "1999",

month = aug,

day = "15",

doi = "10.1143/jjap.38.4872",

language = "English",

volume = "38",

pages = "4872--4875",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 B",

}

X-ray photoelectron spectroscopy study of Pt-oxide thin films deposited by reactive sputtering using O₂/Ar gas mixtures. / Jung, Min Cherl; Kim, Hyeong Do; Han, Moonsup et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4872-4875.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - X-ray photoelectron spectroscopy study of Pt-oxide thin films deposited by reactive sputtering using O2/Ar gas mixtures

AU - Jung, Min Cherl

AU - Kim, Hyeong Do

AU - Han, Moonsup

AU - Jo, William

AU - Kim, Dong Chun

PY - 1999/8/15

Y1 - 1999/8/15

N2 - Thin-film oxides of Pt were grown reactively by rf magnetron sputtering and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Oxygen incorporation of the films was adjusted by controlling the oxygen mixing ratio (OMR). XRD reflections indicated that these samples have an amorphous structure without crystalline ordering of the Pt-O phases. SEM pictures showed that the formation of protrusions appear under the condition of large OMR. The XPS spectra revealed chemical shifts of Pt 4 f peaks, which are ascribed to two different oxidation states of Pt. The amounts of the energy shifts are 1.0 and 2.1 eV, implying that the Pt oxide thin films are composed of PtO grains and intermediate oxides of PtO and PtO2.

AB - Thin-film oxides of Pt were grown reactively by rf magnetron sputtering and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Oxygen incorporation of the films was adjusted by controlling the oxygen mixing ratio (OMR). XRD reflections indicated that these samples have an amorphous structure without crystalline ordering of the Pt-O phases. SEM pictures showed that the formation of protrusions appear under the condition of large OMR. The XPS spectra revealed chemical shifts of Pt 4 f peaks, which are ascribed to two different oxidation states of Pt. The amounts of the energy shifts are 1.0 and 2.1 eV, implying that the Pt oxide thin films are composed of PtO grains and intermediate oxides of PtO and PtO2.

KW - Microstructure

KW - Oxidation states

KW - Pt

KW - Reactive sputtering

KW - X-ray photoelectron spectroscopy

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U2 - 10.1143/jjap.38.4872

DO - 10.1143/jjap.38.4872

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SN - 0021-4922

VL - 38

SP - 4872

EP - 4875

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 8 B

ER -

X-ray photoelectron spectroscopy study of Pt-oxide thin films deposited by reactive sputtering using O₂/Ar gas mixtures

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