Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering

Ji Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae Hyeon Kim, Byung Do Yang, Seongjae Cho, Byung Gook Park, Yoon Kim, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


Neuromorphic computing offers parallel data processing and low energy consumption and can be useful to replace conventional von Neumann computing. Memristors are two-terminal devices with varying conductance that can be used as synaptic arrays in hardware-based neuromorphic devices. In this research, we extensively investigate the analog symmetric multi-level switching characteristics of zinc tin oxide (ZTO)-based memristor devices for neuromorphic systems. A ZTO semiconductor layer is introduced between a complementary metal-oxide-semiconductor (CMOS) compatible Ni top electrode and a highly doped poly-Si bottom electrode. A variety of bio-realistic synaptic features are demonstrated, including long-term potentiation (LTP), long-term depression (LTD), and spike timing-dependent plasticity (STDP). The Ni/ZTO/Si device in which the adjustment of the number of states in conductance is realized by applying different pulse schemes is highly suitable for hardware-based neuromorphic applications. We evaluate the pattern recognition accuracy by implementing a system-level neural network simulation with ZTO-based memristor synapses. The density of states (DOS) and charge density plots reveal that oxygen vacancies in ZTO assist in generating resistive switching in the Ni/ZTO/Si device. The proposed ZTO-based memristor composed of metal-insulator-semiconductor (MIS) structure is expected to contribute to future neuromorphic applications through further studies.

Original languageEnglish
Article number9144610
Pages (from-to)130678-130686
Number of pages9
JournalIEEE Access
StatePublished - 2020


  • Neuromorphic
  • density function theory
  • neural network
  • synaptic device
  • zinc tin oxide


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